Slant reflector with bump structure and fabricating method thereof

ABSTRACT

A method of fabricating slant reflector with bump structure, at least comprising the steps of: providing a substrate; forming a photosensitivity material layer on the substrate; patterning the photosensitivity material layer to form a plurality of trapeziform bumps which the trapeziform bumps have different bottom area and the bottoms of the trapeziform bumps are jointed to each other; and smoothing the trapeziform bumps to form a bump structure with an inclined angle. The invention utilizes a photo-mask with particular pattern and optical diffraction method to fabricate the bump structure in a simple way.

This application incorporates by reference of Taiwan application Serial No. 90121709, filed Aug. 31, 2001. BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The invention relates in general to a slant reflector with bump structure and a fabricating method thereof, and more particularly to the slant reflector with bump structure applied in the reflective type liquid crystal display (LCD).

[0003] 2. Description of the Related Art

[0004] In the recent years, it is not only the brightness but also the viewing angle required for the reflective type liquid crystal display (LCD) in the commercial market. How to develop a reflective type LCD with high brightness and wide viewing angle is a very important issue for the manufacturers and researchers.

[0005] Referring to FIG. 1, which represents the reflectance distribution of a conventional reflector. The reflectance is measured by optical detection system. The reflector is set up horizontally, and surface thereof is smooth. It is assumed that an angle of incidence of the incident light arriving at the surface of reflector is 20 degree. According to the optical theory, the angle of reflectance of the reflected light is −20 degree. Hence, the maximum reflectance R₁ occurs at the viewing angle of −20 degree, and the curve of reflectance distribution is very narrow, mostly in the region around −20 degree, as shown in FIG. 1.

[0006] However, the ideal LCD should represent the maximum reflectance at the viewing angle of 0 degree, and distribute parts of reflectance at a wide range of the other viewing angle. To shift the curve of FIG. 1 towards left, another conventional way is to slant the reflector for changing the light path. For example, the reflector is slanted until the angle between the surface of reflector and the level is 10 degree, so that the original incident light at 20 degree of incidence can be reflected at the angle of 0 degree, as demonstrated in FIG. 2. FIG. 2 represents the reflectance distribution of another conventional reflector. The reflector is set up with an inclined angle (10 degree), and surface thereof is smooth. The maximum reflectance R₁ occurs at the viewing angle of 0 degree, but the curve of reflectance distribution is still narrow, mostly in the region around 0 degree. The objective of the reflective type LCD with wide viewing angle has not been achieved.

[0007] In order to solve the problem which the reflectance over concentrates at a certain angle, a further conventional way is provided by forming numerous bumps on the slant reflector. FIG. 3 represents the reflectance distribution of a further conventional reflector. The reflector is set up with an inclined angle (10 degree), and there are numerous bumps formed on the surface of reflector. The high reflectance is detected around the angle of 0 degree due to the slanted reflector. Also, parts of reflectance are detected in a wide range of viewing angle since the normals on each point of the bump are not parallel. Compared the results of FIG. 2 and FIG. 3, the maximum reflectance R₂ of FIG. 3 is lower than the maximum reflectance R₁ of FIG. 2, but the reflectance distribution of FIG. 3 is wider than that of FIG. 2. Therefore, the LCD adopting the slant reflector with bump structure possesses two attractive features—high brightness and wide viewing angle. A conventional process for making the slant reflector with bump structure has been presented. In this conventional process, a photo-mask with single slit is provided, and multi-step exposure is performed. First, the photo-resist on the substrate is exposed to the UV (Ultraviolet) light at intensity of L₁ for time t₁, and an exposed area A is formed. Second, shift the photo-mask, and expose the photo-resist under the UV light at intensity of L₂ for time t₂, to form an exposed area B. Then, shift the photo-mask and perform the exposure, as depicted before. The steps are repeated. Either by setting equal exposing time and the light intensity L₁>L₂>. . . , or by setting equal intensity and the exposing time t₁>t₂> . . . , the size of exposing areas are controlled at the order of A>B> . . . Subsequently, develop the photo-resist to form a ladder-like look. Then, heat the ladder-like photo-resist for making it reflow, and becoming a bump with smooth surface.

[0008] However, the conventional process for making the slant reflector with bump structure has drawbacks. For example, the photo-mask needs to be shifted over and over again. Also, the position of photo-mask, UV light intensity or duration time needs to be adjusted while the photo-mask is shifted. It is very time-consuming, and the production cost is consequently raised. Furthermore, forming a bump with an inclined angle requires moving the photo-mask and exposing for several times. In the practical application, numerous bumps are demanded for forming a rough surface of slant reflector, so as to enhance the light scattering effect. Hence, the conventional process is not suitable for the mass-production-scale.

SUMMARY OF THE INVENTION

[0009] It is therefore an object of the invention to provide a slant reflector with bump structure and a fabricating method thereof by optical diffraction, so that the fabricating method is simplified and the light scattering effect is improved. Also, the reflective type LCD adopting the slant reflector with bump structure of the invention possesses the advantageous of high brightness and wide viewing angle.

[0010] According to the objective of the invention, a method of fabricating slant reflector with bump structure is provided, and at least comprising the steps of: providing a substrate; forming a photosensitivity material layer on the substrate; patterning the photosensitivity material layer to form a plurality of bumps which the bumps have different bottom area and the bottoms of the bumps are jointed to each other; and smoothing the bumps to form a bump structure with an inclined angle.

[0011] The step of patterning the photosensitivity material layer includes exposing and developing the photosensitivity material layer. A photo-mask provided for exposing the photosensitivity material layer has m groups of patterns (m≧1, m is positive integral). Each group of pattern includes a plurality of opaque bars which the opaque bars have different width, and there is an opaque strip in a slit of the adjacent opaque bars. After exposing and developing, the bottoms of bumps are jointed to each other, and the bumps are arranged orderly from large bottom area to small bottom area. The smoothing step is performed by baking the bumps, thereby the reflowing bumps forms a bump structure with an inclined angle. Each bump structure comprises a plurality of contiguous bumps arranged from high to low, large to small. Numerous bump structures are randomly, or orderly formed on the substrate.

[0012] Other objects, features, and advantages of the invention will become apparent from the following detailed description of the preferred but non-limiting embodiments. The following description is made with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0013]FIG. 1 represents the reflectance distribution of a conventional reflector;

[0014]FIG. 2 represents the reflectance distribution of another conventional reflector;

[0015]FIG. 3 represents the reflectance distribution of a further conventional reflector;

[0016]FIG. 4 is a partial top view of a photo-mask according to the first embodiment of the invention;

[0017]FIG. 5A˜FIG. 5C is a method of fabricating slant reflector with bump structure according to the first embodiment of the invention;

[0018]FIG. 6 is a stereographic, cross-sectional drawing of the slant reflector with bump structure according to the first embodiment of the invention;

[0019]FIG. 7 is a partial top view of a photo-mask according to the second embodiment of the invention;

[0020]FIG. 8 is a stereographic, cross-sectional drawing of the slant reflector with bump structure according to the second embodiment of the invention;

[0021]FIG. 9A is a partial top view of the third photo-mask of the invention;

[0022]FIG. 9B is a partial top view of the fourth photo-mask of the invention; and

[0023]FIG. 10 is a partial top view of the fifth photo-mask of the invention.

DETAILED DESCRIPTION OF THE INVENTION

[0024] In the present invention, a photo-mask with multi-slits pattern is provided for exposing and developing the photosensitivity material (such as photoresist) by optical diffraction. Thus, a number of groups of pattern are formed on the photosensitivity material. Each group of pattern comprises a number of bumps, which the bottoms of the bumps are jointed to each other and the bumps are arranged from high to low, large to small. Then, smoothing process is applied on the bumps, such as melting the bumps by baking followed by reflowing, to form a contiguous and smooth bump structure with an inclined angle.

[0025] The slant reflector with bump structure of the invention can be applied in the reflective type liquid crystal display (LCD). The bump structure with an inclined angle on the substrate can further be covered by a metal film to reflect light. Since the reflective metal film has the same profile as the bump structure underneath, the light entering the reflective type LCD can be reflected in various angles by the metal film; therefore, the attractive features, such as high brightness and wide viewing angle, of the reflective type LCD can be achieved.

[0026] The slant reflector with bump structure and the fabricating method thereof according to the invention are described below. It will be appreciated that the drawings and illustration of the embodiments may slightly vary without departing from the main concepts as disclosed herein. Also, to avoid obscuring the invention, well-known elements not directly relevant to the invention are not shown or described. Accordingly, the specification and the drawing are to be regard as an illustrative sense rather than a restrictive sense.

[0027] First Embodiment

[0028] In the first embodiment of the invention, a photo-mask with multi-slits is provided for forming the slant reflector with bump structure of the invention. The photo-mask has m groups of patterns (m≧1, m is positive integral), and each group of pattern includes n bars having different width (n≧2, n is positive integral). Besides, at least one strip is built in a slit of the adjacent bars.

[0029]FIG. 4 is a partial top view of a photo-mask according to the first embodiment of the invention. The photo-mask 400 includes m groups of patterns. Each group of pattern includes n bars which are denoted as ( 401)₁, (401)₂, (401)₃, . . . , (401)_(n), and the width of bars are W₁, W₂, W₃, . . . , W_(n), respectively. One strip built in a slit of the adjacent bars is illustrated herein. The slits between the bars are d₁, d₂, d₃, . . . , d_(n) in width, and the strips are s₁, s₂, s₃, . . . , s_(n) in width, respectively. M groups of patterns are arranged one by one.

[0030] Next, the steps of pattern transformation are performed through the photo-mask 400 of FIG. 4. In the following description, it is assumed that n=4, d₁=d₂=d₃, . . . =d_(n)=d, and s₁=s₂=s₃, . . . =s_(n)=s, for the purpose of clear demonstration.

[0031]FIG. 5A˜FIG. 5C is a method of fabricating slant reflector with bump structure according to the first embodiment of the invention. The substrate 502 is coated with the photosensitivity material, such as photo-resist 504, and then the photo-resist undergoes the steps of UV (Ultraviolet) exposure and development. It is assumed that the photo-resist 504 is a positive photo-resist dissolving in the developer. The portions of the photo-mask 400 marked by oblique lines represents the opaque regions. The opaque regions of photo-mask 400 include not only the bars (401)₁, (401)₂, (401)₃, (401)₄ in width of W₁, W₂, W₃, W₄, but also the strips 405 in the slits of adjacent bars. For example, the width d of a slit is about 4 μm, and the width s of a strip 405 is about 1 μm; hence, the distance between the strip 405 and closest bar is about 1.5 μm ((4−1)/2). Since the portions of photo-resist 504 shielded by the opaque bars (401)₁, (401)₂, (401)₃, (401)₄ are not exposed to UV radiation, it is not dissolved in the developer. On the contrary, the portions of photo-resist 504 under the slits of the photo-mask 400 are exposed to UV radiation, so as to dissolve in the developer after photolithography.

[0032] The existence of strip 405 separates the original slit into two narrower slits. The UV light is diffracted through the photo-mask 400 with two adjustable slits. As the light waves spread out from the slit, they meet which results in interference between the two waves. This optical interference phenomenon is known as “Double-slit diffraction”. Consequently, the portions of photo-resist 504 associated with the slits are under exposed. As shown in FIG. 5B, the profile of photo-resist 504 is shaped like trapezium after development, and the trapeziform photo-resist 505, 506, 507, and 508 are formed. Also, the bottoms of the trapeziform photo-resist are jointed to each other.

[0033] Additionally, the photo-resist with the larger bottom area has the higher trapeziform photo-resist block after exposing and developing. For example, the photo-resist originally 14 μm wide is higher than 7 μm wide after exposing and developing. Accordingly, the width of bars on the photo-mask 400 of the embodiment is W₁>W₂>W₃>W₄, so that the bottom area of the photo-resist is 505>506>507>508, and the height of the photo-resist is h₁>h₂>h₃>h₄ after exposing and developing.

[0034] Next, the step of melting those trapeziform photo-resist 505, 506, 507, and 508 is performed, followed by the smoothing step. The photo-resist can be composed of resin, sensitizer with photoactivity, and appropriate solvent. Therefore, the solvent of the photo-resist is vaporized and decreased to the lower content, if the heating procedure such as baking is applied on the photo-resist after developing. The advantage of decreasing the solvent content of the photo-resist is able to enhance the adherence of photo-resist to the substrate. Subsequently, the heating temperature is increased up to the glass transition temperature of photo-resist, it will be softened as the melting glass, and the surface is going to be smooth due to reflow. Since the bottoms of the trapeziform photo-resist 505, 506, 507, and 508 (FIG. 5B) are jointed to each other, four contiguous bumps (FIG. 5C) will be formed after performing the step of smoothing. Furthermore, the trapeziform photo-resist 505, 506, 507, and 508 of FIG. 5B are arranged from high to low, the reflowed photo-resist 505′, 506′, 507′, and 508′ forms a slant profile with an inclined angle θ, as shown in FIG. 5C. In this preferred embodiment, a plurality of trapeziform photo-resist is heated at the temperature ranged from 200° C. to 230° C. for 1 hours, approximately. However, the invention is not limited herein. In the practical application, the heating temperature and the duration time depend on the characteristic of the photo-resist.

[0035] Referring to FIG. 6, which is a stereographic, cross-sectional drawing of the slant reflector with bump structure according to the first embodiment of the invention. It is assumed that the photo-mask 400 includes two groups of pattern (m=2). According to the fabricating method of FIG. 5A˜FIG. 5C, two groups of bump structures with an inclined angle θ are produced, and each group of bump structures comprises of four contiguous bumps (n=4) which the bumps are arranged from high to low, large to small.

[0036] The slant reflector with bump structure of the invention can be applied in the reflective type LCD. After the fabricating process of FIG. 5C, a metal film is further deposited over the substrate 502, and covers the surface of photo-resist 505′, 506′, 507′, and 508′ (of FIG. 5C, and FIG. 6). Since the reflective metal film has the undulated profile the same as the bump structure underneath, the light entering the reflective type LCD can be reflected in various angles by the metal film; therefore, the reflective type LCD possesses the attractive features, such as high brightness and wide viewing angle, in the commercial market.

[0037] According to the description above, the slant bump structure of the first embodiment comprises m groups of bump structures including a plurality of bumps (m×n), and each group of bump structure including n bumps which n bumps are arranged from high to low, large to small in order to form a contiguous bump structure with an inclined angle.

[0038] Although each group of bump structure having n bumps is illustrated in this embodiment, the invention is not limited herein. Each group of bump structure can also have different number of bumps; for example, the first group having 5 bumps, the second group having 6 bumps, the third group having 4 bumps, etc.

[0039] Second Embodiment

[0040] Another photo-mask with multi-slits is provided for fabricating the slant reflector with bump structure of the invention. After fabrication, the bump aggregation on the photo-resist is increased. Hence, the light scattering effect is better if the slant reflector with bump structure of this embodiment is applied in the reflective type LCD.

[0041] The photo-mask has m groups of patterns (m≧1, m is positive integral), and each group of pattern includes n bars (n≧2, n is positive integral) which n bars having different width are arranged from wide to narrow. Similarly, one strip built in a slit of the adjacent bars is taken for illustration hereafter. M groups of patterns can be arranged on the photo-mask randomly, or orderly as forming an array, such as m′ groups in length and n′ groups in width (m=m′×n′). In the following description, it is assumed that 4 groups of patterns are randomly arranged and each group includes 3 bars (m=4, n=3), for example.

[0042]FIG. 7 is a partial top view of a photo-mask according to the second embodiment of the invention. There are 4 groups (m=4) of patterns arranged on the photo-mask 700, and each group of pattern includes 3 bars (n=3) arranged from wide to narrow. Also, in the adjacent bars further has a strip.

[0043] Next, the steps of pattern transformation are performed through the photo-mask 700 of FIG. 7. The fabricating method of the second embodiment is similar as the first embodiment except the photo-mask 400 is replaced with the photo-mask 700. As shown in FIG. 5A˜FIG. 5C, the photo-resist undergoes three steps of exposing, developing, and smoothing. Also, the photo-resist is a positive photo-resist dissolving in the developer, and the portions of the photo-mask (700) marked by oblique lines represents the opaque regions. Additionally, the distance is controlled between each group of pattern, denoted as d₁′, d₂′, d₃′, d₄′, d₅′ in FIG. 7. After melting and reflowing, each groups of photo-resist is able to joint together, and forms contiguous bump structure over the substrate.

[0044] Referring to FIG. 8, which is a stereographic, cross-sectional drawing of the slant reflector with bump structure according to the second embodiment of the invention. In the same fabricating steps, using photo-mask 700 can produce more bumps than using photo-mask 400, and create the rougher surface of photo-resist. Certainly, the bump structure similar to FIG. 8 can also be formed if m groups of patterns are arranged on the photo-mask orderly as an array, such as m′ groups in length and n′ groups in width (m=m′×n′).

[0045] Although the patterns of photo-masks 400 and 700 are taken for illustration in the aforementioned examples, the invention is not limited herein. For instance, m groups of patterns can be arranged randomly on the photo-mask and each group includes a plurality of opaque bars arranged from wide to narrow; or m groups of patterns arranged on the photo-mask in an array. The number of opaque bars in each group can be equal or different. Also, the photo-mask is not limited to the double-slit pattern of FIG. 4. For example, two strips S₁₁ and S₁₂ can be build in parallel between the bars (901)₁ and (901)₂, as shown in FIG. 9A. The strips S₁₁ and S₁₂ in FIG. 9A could be designed as zigzag edge, as shown in FIG. 9B. Additionally, as shown in FIG. 10, a discontinuous strip S can be formed in the slits (102)₁ and (102)₂. The bump structure of the invention can be successfully achieved by those designs of photo-mask with multi-slits.

[0046] Therefore, the photo-resist on the to-be-bared area needs to be removed totally to prevent the poor-resistance and poor circuit contact. When all the substrate undergoes the exposure by UV light with ordinary intensity, the UV light through the photo-mask with multi-slit is diffracted, known as double-slit diffraction. Hence, the quantity of UV light reached to the photo-resist is decreased, which is similar to the condition of under exposure. The bottoms of photo-resist are jointed to each other after developing. Consequently a contiguous bump structure with an inclined angle is formed after melting. Moreover, in the general process for making the TFT LCD, there are some area of the substrate had to be bared, i.e. to form the contact hole for contacting the circuit. As the bared area of the substrate, an associated opening area is formed on the photo-mask so that all the UV light passes for completely exposing. Simply saying, the slant reflector with bump structure of the invention and removal of photo-resist on the to-be-bared area of the substrate can be achieved simultaneously by using the UV light with ordinary intensity.

[0047] In another aspect, the fabricating method of slant reflector with bump structure of the invention is adopting a photo-mask having a first region and a second region to expose the photo-resist on the substrate. The first region of photo-mask is a transparent region with multi-slits, so that a first part of the photo-resist is under-exposed to form a concave portion. The second region of photo-mask is an opaque region, so that a second part of the photo-resist is shielded from the UV light. After developing, the second part of photo-resist is connected to each other through the first part of photo-resist. After smoothing the photo-resist, a contiguous deformity structure with a predetermined inclined angle is produced.

[0048] According to the foregoing description, the invention utilizes a photo-mask with multi-slit and a simple process comprising the steps of exposure, developing, and smoothing to form a slant reflector with numerous groups of bump structures having a great light scattering effect. For the reflective type LCD adopted the slant reflector with bump structures of the invention, high brightness and wide viewing angle can be achieved. Additionally, the more the groups of patterns on the photo-mask are, the higher the bump aggregation is, and the better the effect of light scattering is.

[0049] In the preferred embodiments described herein, the advantages of the slant reflector with bump structure and the fabricating method thereof according to the invention are summarized as follows:

[0050] 1. The bump aggregation of slant reflector with bump structure of the invention is higher than that of conventional reflector, and has a better light scattering effect. Therefore, the reflective type LCD adopted the slant reflector with bump structures of the invention has high brightness and wide viewing angle.

[0051] 2. Only one exposing procedure is required in the fabrication of the slant reflector with bump structure. The simplified process, saving the production cost and time, is very suitable for mass-production scale.

[0052] 3. The ordinary intensity of exposure can form the slant reflector with bump structure and remove the photo-resist on the to-be-bared area of substrate, simultaneously. The timesaving fabricating process has great economical benefit.

[0053] While the invention has been described by way of examples and in terms of the preferred embodiments, it is to be understood that the invention is not limited thereto. On the contrary, it is intended to cover various modifications and similar arrangements and procedures, and the scope of the appended claims therefore should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and procedures. 

What is claimed is:
 1. A method of fabricating slant reflector with bump structure, at least comprising the steps of: providing a substrate; forming a photosensitivity material layer on the substrate; patterning the photosensitivity material layer to form a plurality of bumps which the bumps have different bottom area and the bottoms of the bumps are jointed to each other; and smoothing the bumps to form a bump structure with an inclined angle.
 2. The method of fabricating slant reflector with bump structure according to claim 1, wherein the step of smoothing the bumps comprises the steps of: melting the bumps by baking; and reflowing the bumps to form the bump structure with the inclined angle.
 3. The method of fabricating slant reflector with bump structure according to claim 1, wherein the bumps are in different height.
 4. A method of fabricating slant reflector with bump structure, at least comprising the steps of: providing a substrate; forming a photosensitivity material layer on the substrate; patterning the photosensitivity material layer to form m groups of patterns (m≧1, m is positive integral), wherein each group includes a plurality of bumps which the bumps have different bottom area and the bottoms of the bumps are jointed to each other; and smoothing the bumps to form a bump structure with an inclined angle.
 5. The method of fabricating slant reflector with bump structure according to claim 4, wherein the step of patterning the photosensitivity material layer includes exposing and developing the photosensitivity material layer.
 6. The method of fabricating slant reflector with bump structure according to claim 5, wherein a photo-mask is provided for exposing the photosensitivity material layer.
 7. The method of fabricating slant reflector with bump structure according to claim 6, wherein the photo-mask has m groups of patterns (m≧1, m is positive integral), and each group of pattern includes a plurality of opaque bars which the opaque bars have different width, and there is an opaque strip in a slit of the adjacent opaque bars.
 8. The method of fabricating slant reflector with bump structure according to claim 4, wherein the bumps are in different height.
 9. The method of fabricating slant reflector with bump structure according to claim 8, wherein the jointed bumps are arranged orderly according to the large bottom area to the small bottom area, whereby m (m≧1, m is positive integral) groups of the bump structures with the inclined angles are formed after smoothing, and each group includes a plurality of bumps arranged from high to low, large to small.
 10. The method of fabricating slant reflector with bump structure according to claim 4, wherein m groups of patterns formed in the photosensitivity material layer is arranged in the order.
 11. The method of fabricating slant reflector with bump structure according to claim 4, wherein m groups of patterns formed in the photosensitivity material layer is randomly arranged.
 12. The method of fabricating slant reflector with bump structure according to claim 4, wherein each group of pattern includes n of bumps (n≧2, n is positive integral) which the bumps have different bottom area and the bottoms of the bumps are jointed to each other
 13. The method of fabricating slant reflector with bump structure according to claim 12, wherein m groups of bump structure with the inclined angle are formed after smoothing, and each group includes n bumps (n≧2, n is positive integral).
 14. A method of fabricating slant reflector with bump structure, comprising the steps of: providing a substrate; forming a photosensitivity material layer on the substrate; patterning the photosensitivity material layer to form a plurality of bumps which the bumps have different bottom area and the bottoms of the bumps are jointed together; smoothing the bumps to form a bump structure with an inclined angle; and forming a reflective metal film on the substrate to cover the bump structure with the inclined angle
 15. The method of fabricating slant reflector with bump structure according to claim 14, wherein the step of patterning the photosensitivity material layer includes exposing and developing the photosensitivity material layer.
 16. The method of fabricating slant reflector with bump structure according to claim 14, wherein the step of smoothing the bumps comprises the steps of: melting the bumps by baking; and reflowing the bumps to form the bump structure with the inclined angle.
 17. The method of fabricating slant reflector with bump structure according to claim 14, wherein the slant reflector with bump structure is applied in the reflective liquid crystal display (LCD).
 18. A method of fabricating slant reflector with bump structure, at least comprising the steps of: forming a photosensitivity material layer on a substrate; exposing the photosensitivity material layer, so that a first part of the photosensitivity material layer is under-exposed; developing the photosensitivity material layer, so that the first part of the photosensitivity material layer forms a concave portion; and smoothing the photosensitivity material layer to form a contiguous deformity structure with a predetermined inclined angle.
 19. The method of fabricating slant reflector with bump structure according to claim 18, wherein a photo-mask is provided for exposing the photosensitivity material layer.
 20. The method of fabricating slant reflector with bump structure according to claim 19, wherein the photo-mask has a first region and a second region associated with the first part and a second part of the photosensitivity material layer respectively, the first region of the photo-mask has a transparent region with multi-slits structure, and the second region of the photo-mask has a opaque region.
 21. A method of fabricating slant reflector with bump structure, at least comprising the steps of: forming a photosensitivity material layer on a substrate, and the photosensitivity material layer having a first part and a second part; exposing the photosensitivity material layer, so that the first part of the photosensitivity material layer is under-exposed; developing the photosensitivity material layer, so that the second part of the photosensitivity material layer joints to each other through the first part; and melting the photosensitivity material layer to form a contiguous deformity structure with a predetermined inclined angle. 